Semiconductor laser amplifier
文献类型：专利
| 作者 | NAMEGAYA TAKESHI; MAKINO TOSHIHIKO |
| 发表日期 | 1990-03-23 |
| 专利号 | JP1990082592A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser amplifier |
| 英文摘要 | PURPOSE:To obtain a sufficient amplification gain with a short device length and change the taking-out direction of a light in a substrate surface and facilitate a high integrity by a method wherein an angle formed by a waveguide and an end surface is so selected as to make the incident angle of a laser beam propagated in the waveguide against the end surface larger than a critical angle. CONSTITUTION:An n-type InP first cladding layer 2, an InGaAsP active layer 3 and P-type InP second cladding layer 4 are successively built up on an n-type InP semiconductor substrate The thicknesses of the parts of the second cladding layer corresponding to waveguide are increased a little. With this construction, a light confining cladding part 8 is formed. The waveguide is bent at both the end surfaces 9 and 10 and formed into a zig-zag shape. Angles formed by the waveguides and the end surfaces 9 and 10 are so selected as to make the incident angle of an incident laser beam against the end surfaces 9 and 10 larger than a critical angle. Therefore, the incident laser beam is totally reflected by the end surface 10 which functions as a totally reflective surface 11 and guided into the other waveguide. Further, the laser beam is totally reflected by the end surface 9 and taken out from the end surface 10 through a non-reflective coating film. |
| 公开日期 | 1990-03-23 |
| 申请日期 | 1988-09-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81875]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | NAMEGAYA TAKESHI,MAKINO TOSHIHIKO. Semiconductor laser amplifier. JP1990082592A. 1990-03-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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