Semiconductor laser device and method for manufacturing the same
文献类型：专利
| 作者 | SHIN, YOUNG CHUL |
| 发表日期 | 2008-03-04 |
| 专利号 | US7339966 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and method for manufacturing the same |
| 英文摘要 | The present invention provides a semiconductor laser device capable of improving reproducibility and electrical properties of the device, and a manufacturing method thereof. The semiconductor laser device according to the invention includes a first p type AlGaInP-based clad layer formed on an active layer, and a second p-type AlGaInP-based clad layer formed on the first p-type AlGaInP-based clad layer and having a ridge structure. The first p-type AlGaInP-based clad layer is Zn-doped with a concentration that restrains Zn diffusion into the active layer, and the second p-type AlGaInP-based clad layer is Mg-doped with a concentration higher than that of the first AlGaInP-based clad layer. |
| 公开日期 | 2008-03-04 |
| 申请日期 | 2005-12-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81877]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | SHIN, YOUNG CHUL. Semiconductor laser device and method for manufacturing the same. US7339966. 2008-03-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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