Semiconductor light-emitting device
文献类型：专利
| 作者 | FURUMIYA SATOSHI |
| 发表日期 | 1986-03-06 |
| 专利号 | JP1986046087A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To avoid a diffusion having an adverse effect on a luminescent function, and to improve yield on manufacture by interposing a P type GaAs layer having impurity concentration lower than a P type GaAs substrate between the substrate and a clad layer. CONSTITUTION:A P type GaAs buffer layer 1a having impurity concentration lower than a substrate 1 is grown on the substrate 1 in an epitaxial manner before a current limiting layer 2 is grown, and the buffer layer 1a is added and interposed between the substrate 1 and the current limiting layer 2. Accordingly, the diffusion of Zn from the substrate 1 is absorbed by the P type GaAs layer 1a, and an impurity in the P type GaAs layer 1a diffusing to the current limiting layer 2 is made largely less than Zn while an effect on a clad layer 4 of the diffusion of the impurity is prevented, thus obviating the deterioration of the functions of a PNP junction and a laser luminescent mechanism, then improving yield on the manufacture of a semiconductor light-emitting device. |
| 公开日期 | 1986-03-06 |
| 申请日期 | 1984-08-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81889]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | FURUMIYA SATOSHI. Semiconductor light-emitting device. JP1986046087A. 1986-03-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。