Semiconductor device and manufacture thereof
文献类型：专利
| 作者 | SEMURA SHIGERU; NAKAJIMA HISAO; SAITOU HIROSHI; KOBAYASHI KEISUKE; OOTA TSUNEAKI; FUKUZAWA TADASHI; UCHIDA YOUKO |
| 发表日期 | 1985-10-18 |
| 专利号 | JP1985207390A |
| 著作权人 | KOGYO GIJUTSUIN (JAPAN) |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and manufacture thereof |
| 英文摘要 | PURPOSE:To stabilize an output, and to improve reproducibility by forming a semiconductor laser having buried type double hetero-structure and a photodetector on the same substrate and detecting laser beams from the semiconductor laser by the photodetector. CONSTITUTION:A P type CaAlAs layer 22 and three layers or more of two kinds of compound semiconductor thin-films having different forbidden band width are laminated on a substrate 21, and quantum well type structure is used as an active layer 24. An N type GaAlAs layer 23 having forbidden band width larger than that of semiconductors is shaped as an upper clad layer, thus forming double hetero-junction structure. An N type GaAs layer 25 as an uppermost layer is etched by utilizing a mask 26 for diffusing an impurity, and the P type impurity is diffused. The two semiconductors constituting a quantum well type are alloyed in an impurity diffusion region in the active layer 24, forbidden band width is made larger than a light-emitting region in the lower section of the N type GaAs layer 25 and an optical waveguide, and a refractive index is reduced. The performance of a laser is improved, and the yield of products is enhanced largely. |
| 公开日期 | 1985-10-18 |
| 申请日期 | 1984-03-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81891]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN (JAPAN) |
| 推荐引用方式 GB/T 7714 | SEMURA SHIGERU,NAKAJIMA HISAO,SAITOU HIROSHI,et al. Semiconductor device and manufacture thereof. JP1985207390A. 1985-10-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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