Manufacture of semiconductor device
文献类型：专利
| 作者 | YONEDA KOJI; INOUE YASUAKI |
| 发表日期 | 1991-07-10 |
| 专利号 | JP1991160776A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To operate with a high output and to stably operate at the time of low output by forming a stripe groove in depth shallower than the thickness of a current blocking layer near the end face of a laser resonator and deeper than the thickness of the blocking layer in the resonator, laminating an oscillation layer thereon, and removing the shallow region of the groove. CONSTITUTION:A stripe groove 7 of its depth shallower than the thickness of a current blocking layer 2 in the vicinity A of the end face of a laser resonator and deeper than the thickness of the layer 2 in the interior B of the resonator is formed in the layer 2, an oscillation layer is laminated thereon, and the shallow region of the groove 7 is removed. Thus, the shallow region A and the deep region B of the groove 7 are provided to form a step at the boundary, the thicknesses of a p-type clad layer 3 and an active layer 4 to be formed thereon is delicately varied in the degree impossible to be determined by an optical microscope in the shallow and deep regions of the groove. Thus, it can be operated with a high output and simultaneously stably operated at the time of low output. |
| 公开日期 | 1991-07-10 |
| 申请日期 | 1989-11-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81905]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | YONEDA KOJI,INOUE YASUAKI. Manufacture of semiconductor device. JP1991160776A. 1991-07-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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