Manufacture of semiconductor laser element
文献类型：专利
| 作者 | YONEZU HIROO |
| 发表日期 | 1985-04-04 |
| 专利号 | JP1985058692A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To simplify the structure of the titled element by the formation of a high resistant semiconductor crystal thin film having a larger band gap than the laser energy on a cleavage surface by a method wherein a buffer layer is selectively side-etched, resulting in the cleavage of a double hetero junction layer in the neighborhood of the etched side wall. CONSTITUTION:The n-Al0.6Ga0.4As buffer layer 2, an n-Al0.4Ga0.6As clad layer 3, a P-Al0.1Ga0.9As active layer 4, a P-Al0.4Ga0.6As clad layer 5, and a P-GaAs cap layer 6 are successively formed on a GaAs substrate These layers 3-6 are applied to a stripe structure, and a groove 7 of a fixed width is formed so as to reach the layer 2 by etching in the direction of (110) perpendicular to the stripe direction. Next, undercut ends 8 are etched, and the cleavage surfaces 10 are formed by means of cleavage pressure sections 9. The semiconductor laser device is simplified in structure and easily manufactured by the formation of a high resistant Al0.4Ga0.6Al thin film 11 on this cleavage surface 10. |
| 公开日期 | 1985-04-04 |
| 申请日期 | 1983-09-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81911]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | YONEZU HIROO. Manufacture of semiconductor laser element. JP1985058692A. 1985-04-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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