半導体発光素子の製造方法
文献类型：专利
| 作者 | 木下 順一; 森永 素安 |
| 发表日期 | 1995-11-13 |
| 专利号 | JP1995105556B2 |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体発光素子の製造方法 |
| 英文摘要 | PURPOSE:To adjust the width of an active layer with excellent controllability, and optimize the junction area, the carrier density, etc. of a buried part, by filling the neighboring part of both sides of an active layer or its periphery with two kinds of semiconductor layers wherein an active layer contributing to light emission has a larger forbidden bandwidth, and the conductivity type is inverse between the upper layer and lawer layer. CONSTITUTION:On an N-type (100) InP substrate 10, the following are formed by crystal growth; an N-InP buffer layer 11, an undoped GaInASP active layer 12 which emits a light of 3mum band, and a P-InP protective film 13. Then channel etching is performed such that the active layer is 1mum in width, and grooves 14 for burying on both sides of the active layer 12 are 2 in width, and a P-InP clad layer 15 and a P GaInAsP cap layer 16 are grown on the whole surface. On the active layer 12, a stripe type Au-Zn electrode 17 is formed, which is subjected to etching till the active layer 12 on both sides is exposed. After deposition of an SiO2 film 18, an Au-Cr electrode 19 is formed by vapor deposition on the whole surface. After polishing, an Au-Ge electrode 20 as an N side electrode is formed. |
| 公开日期 | 1995-11-13 |
| 申请日期 | 1986-09-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81915]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | 木下 順一,森永 素安. 半導体発光素子の製造方法. JP1995105556B2. 1995-11-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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