Semiconductor laser device
文献类型：专利
| 作者 | YAMASHITA SHIGEO; MATSUEDA HIDEAKI; NAKAMURA MICHIHARU |
| 发表日期 | 1984-10-23 |
| 专利号 | JP1984186385A |
| 著作权人 | KOGYO GIJUTSUIN (JAPAN) |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To sufficiently connect a diode and electric circuits electrically and to upgrade the oscillating efficiency in case the laser diode and the electric circuits are integrated by a method wherein a precise pattern of the complicated circuits is formed according to an ion implantation technique, etc. CONSTITUTION:A P type GaAs conductive layer 2, an N type GaAs current constricting layer 3, a P type Ga0.6Al0.4As clad layer 4 and a Ga0.95Al0.05As active layer 5 are formed in order on the semi-insulating substrate 1 of an integrated semiconductor laser device. Furthermore, an N type Ga0.6Al0.4As clad layer 6 and an N type GaAs cap layer 7 are formed on the surface of the layer 5 for making into a double heterostructure. Moreover, a laser upper part electrode 9, ohmic electrodes 10 and 12, a Schottky electrode 11 and bonding pads 13 and 14 are provided through the intermediaries of SiO2 insulating layers 8 and 15, and, when forward bias has been impressed on a laser element, the layer 3 functions as a structure which is reversely biased, thereby concentrating current efficiently in the oscillating region of the active layer 5 and beginning oscillation at low threshold values. |
| 公开日期 | 1984-10-23 |
| 申请日期 | 1983-04-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81921]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN (JAPAN) |
| 推荐引用方式 GB/T 7714 | YAMASHITA SHIGEO,MATSUEDA HIDEAKI,NAKAMURA MICHIHARU. Semiconductor laser device. JP1984186385A. 1984-10-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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