Semiconductor laser
文献类型：专利
| 作者 | AOYANAGI TOSHITAKA; SHIGIHARA KIMIO |
| 发表日期 | 1992-02-07 |
| 专利号 | JP1992037083A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a ridge buried semiconductor laser, in which the deterioration of a resonator edge face is hardly generated even at the time of high output, by a method wherein a current blocking layer is provided on an optical waveguide in the vicinity of the resonator edge face. CONSTITUTION:A clad layer 2, an active layer 3, a clad layer 4 and a protective layer 5 are grown in a multilayer in order on an N-type GaAs substrate Then, a striped SiNx film 6 is formed and thereafter, a ridge part 7 is formed. Then, an SiNx film removed part 12 which is used as a resonator edge face is formed. Then, when an N-type GaAs current blocking layer 8 is grown, the current blocking layer 8 is formed on the part having not the film 6. Then, the film 6 is removed. Lastly, after a P-type GaAs contact layer 9 is grown, a laser chip 10 is cut out. In this constitution, a current injection in the resonator edge face part is prevented by the layer 8 and the deterioration of the resonator edge face at the time of a high-output operation can be prevented. |
| 公开日期 | 1992-02-07 |
| 申请日期 | 1990-05-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81923]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | AOYANAGI TOSHITAKA,SHIGIHARA KIMIO. Semiconductor laser. JP1992037083A. 1992-02-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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