Semiconductor laser
文献类型：专利
| 作者 | YAGI KATSUMI |
| 发表日期 | 1989-07-24 |
| 专利号 | JP1989184980A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable a first ridge section to oscillate high power laser rays and a second ridge section to oscillate laser rays in a multi-mode by a method wherein a first ridge section extending constant in width and a second ridge section whose both ends are small in width are made to extend in parallel each other. CONSTITUTION:A buffer layer 2, a first clad layer 3, an active layer 4, a second clad layer 5, a third clad layer 6, and a cap layer 7 are successively laminated on a substrate A first and a second ridge sections 8 and 9 100mum separate from each other extend in parallel with each other, where the first ridge section 8 is so formed as to be 4mum constant in width B1 and the second ridge 9 is formed into such a shape that its ends are 4mum in width B2 and the other part is 7mum in width B2'. The formation of the ridge sections 8 and 9 are made by performing a selective etching onto the cap layer 8 and the third clad layer 6 using a hydrofluoric acid etching solution of HF:H2O=1:10 after the layers 2-7 are formed. |
| 公开日期 | 1989-07-24 |
| 申请日期 | 1988-01-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81937]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | YAGI KATSUMI. Semiconductor laser. JP1989184980A. 1989-07-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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