Semiconductor laser device
文献类型：专利
| 作者 | KASAI SHUSUKE; TAKIGUCHI HARUHISA; MORIMOTO TAIJI; KANEIWA SHINJI; HAYASHI HIROSHI |
| 发表日期 | 1989-04-19 |
| 专利号 | JP1989100988A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device which can reduce light density at the end surface, and decrease oscillation threshold current, by making the reflectivity of a light guide layer part of a light emitting side end surface lower than those of the active layer part of the light emitting side end surface, the active layer part of the rear end surface, and the light guide layer part of the rear end surface. CONSTITUTION:A laser emitting end surface is coated with an Al2O3 film having a thickness of quarter wavelength, and a transmission film 11 whose transmittance is 1% is formed. A rear end surface is coated with an Al2O3/amorphous Si multilayer, to form a high reflective film 12. On the laser emitting end surface, an aluminum film is vapor-deposited to form an aluminum high reflective film 13. In this laser, both end surfaces of a resonator of the active layer part, and the rear end surface of the light guide layer are high reflective films and the light density at the end surfaces decreases as compared with usual cases. At the light emitting end surface side of the light guide layer, the light density increases, but the increase is relieved because the light guide layer is comparatively thin. Therefore end surface destruction level can be increased. |
| 公开日期 | 1989-04-19 |
| 申请日期 | 1987-10-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81939]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | KASAI SHUSUKE,TAKIGUCHI HARUHISA,MORIMOTO TAIJI,et al. Semiconductor laser device. JP1989100988A. 1989-04-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。