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文献类型：专利
| 作者 | KUSUKI TOSHIHIRO |
| 发表日期 | 1989-12-06 |
| 专利号 | JP1989057514B2 |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To improve the performance of a semiconductor light emitting element by epitaxially growing in liquid phase continuously different conductive type two-layer clad layers selectively on the periphery of a mesa stripe and burying the mesa stripe. CONSTITUTION:A clad layer 2 made of N-InP, and active layer 3 made of N- InGaAsP and the second clad layer made of P-InP at part 4a are sequentially continuously epitaxially grown on a substarate 1 made of N-InP the (001) plane as a main surface using a slide type liquid phase growing process. Then, an SiO2 film is covered thereon, and a mask pattern 6 is formed along the direction of the azimuth (110) in the plane on the substrate. Thereafter, a mesa stripe 7' made of the layers 2, 3 and the part 4a of the layer 4 and having a pattern 6 on the upper surface is formed. Further, a clad layer 8 consisting of P-InP reaching the active layer 3 of the stripe 7' and a clad layer 9 reaching the pattern 6 are formed, burying the stripe 7', thereby, improvig the light emitting capacity and operating life period of the light emitting element. |
| 公开日期 | 1989-12-06 |
| 申请日期 | 1980-05-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81943]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KUSUKI TOSHIHIRO. -. JP1989057514B2. 1989-12-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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