Manufacture of semiconductor laser
文献类型：专利
| 作者 | HORIKAWA HIDEAKI; YAMADA TOMOYUKI; MATOBA AKIHIRO; WATANABE AKIRA |
| 发表日期 | 1986-10-30 |
| 专利号 | JP1986244085A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To facilitate crystal growth on a substrate in one process by a method wherein a groove, which has a pigeon-tail-shaped cross section and extends in a stripe shape, is formed in the substrate and current-constricting layers are formed only on the parts of the substrate surface outside the groove by utilizing a surface tension of a growth solution for the current-constricting layer. CONSTITUTION:An etching mask is applied on a substrate surface 10a and a stripe shape window is formed in the mask and a groove 11 is formed in the substrate 10 by etching through the window. The cross section of the groove 1 taken perpendicular to the stripe direction has a pigeon tail shape. Then current-constricting layers 12 are formed by liquid phase epitaxial growth of N-type InP layers. In this process, the N-type InP growth solution 12a does not penetrate into the groove 11 and does not wet the inside of the groove 1 Therefore, the current-constricting layers 12 grow only on the parts of the substrate surface 10a outside the groove 1 Then buffer layers 13 are formed on the current-constricting layers 12 and inside the groove 11 and, successively, the first cladding layer 14, an activation layer 15, the second cladding layer 16 and a cap layer 17 are formed on them to obtain a wafer composition with the crescent activation layer 15. After that, predetermined electrodes are deposited. |
| 公开日期 | 1986-10-30 |
| 申请日期 | 1985-04-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81950]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HORIKAWA HIDEAKI,YAMADA TOMOYUKI,MATOBA AKIHIRO,et al. Manufacture of semiconductor laser. JP1986244085A. 1986-10-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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