Semiconductor laser device
文献类型：专利
| 作者 | YAMASHITA SHIGEO; KAYANE NAOKI; OOUCHI HIROBUMI |
| 发表日期 | 1984-05-10 |
| 专利号 | JP1984080983A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To provide the titled laser device with remarkably stable characteristics even at high optical output by a method wherein a thrid clad layer, a light guide layer and a fourth clad layer are provided around the end whereon laser beam is emitted while current is concentrated on a striped active region against the section perpendicular to the direction toward which the laser beam is advancing. CONSTITUTION:An N-Ga0.5Al0.5As clad layer 2, a P-Ga0.75Al0.25 As light guide layer 3, a P-Ga0.5Al0.5As clad layer 4, an N-GaAs layer 5 are successively formed on an N type GaAs substrate Firstly a striped hole is formed down to the semiconductor substrate 1 and another N-Ga0.5As clad layer 6, an undope Ga0.86Al0.14As active layer 7, a P-Ga0.5As clad layer 8 and an N-GaAs cap layer 9 are successively formed. Secondly a Zn diffusion 10 is selectively formed on an N-GaAs cap layer 9 located on the upper part of a laser active region and a P-electrode 11, an N-electrode 12 are evaporated and then a laser chip is produced by means of cleaving and scribing. |
| 公开日期 | 1984-05-10 |
| 申请日期 | 1982-11-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81962]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | YAMASHITA SHIGEO,KAYANE NAOKI,OOUCHI HIROBUMI. Semiconductor laser device. JP1984080983A. 1984-05-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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