Manufacture of semiconductor laser
文献类型：专利
| 作者 | WATANABE AKIRA; YAMADA TOMOYUKI; IMANAKA KOICHI; KAWAI YOSHIO |
| 发表日期 | 1986-12-11 |
| 专利号 | JP1986281574A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To remove a leakage current path by forming inverted mesa double hetero-structure onto a GaAs substrate and shaping an AlGaAs buried layer having double hetero-structure by utilizing the melt-etching of a liquid-phase epitaxial growth method. CONSTITUTION:An N-type AlxGa1-xAs clad layer 32, a P-type GaAs active layer 33, a P-type AlxGa1-xAs clad layer 34 and a P-type GaAs contact layer 35 are crystal-grown on an N-type GaAs substrate 31 in succession. An inverted mesa stripe reaching the substrate 31 from the surface of the contact layer 35 is shaped, a thin P-type AlyGa1-yAs buried layer 37 is grown, and the exposed surface 36 of the N-type GaAs substrate 31 is coated. Melt-etching is controlled properly, the end surfaces of the active layer 33 are melt-etched slightly in the lateral direction to form a constriction 38 to the active layer 33 section, and a P-type AlyGa1-yAs buried layer 39 is grown. An N-type AlyGa1-yAs buried layer 41 is grown to completely bury the inverted mesa stripe. Accordingly, a leakage current path can hardly be removed. |
| 公开日期 | 1986-12-11 |
| 申请日期 | 1985-06-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81970]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | WATANABE AKIRA,YAMADA TOMOYUKI,IMANAKA KOICHI,et al. Manufacture of semiconductor laser. JP1986281574A. 1986-12-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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