Manufacture of semiconductor laser element
文献类型：专利
| 作者 | FUKUNAGA TOSHIAKI; WATANABE AKIRA; IMANAKA KOUICHI; KAWAI YOSHIO |
| 发表日期 | 1986-01-20 |
| 专利号 | JP1986012090A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To produce a very thin film with high reproducibility by a method wherein a mesa stripe is formed on a semiconductor substrate and then a first clad layer, activation layer, and a second clad layer are formed, in that order. CONSTITUTION:On a mesa stripe provided on a p type GaAs substrate, an n type GaAs current constricting layer 2 is deposited by the liquid phase epitaxial growth method. Next, by lithography, a groove is formed at the middle of the mesa stripe. The second use of the liquid phase epitaxial growth method results in the deposition of a p type AlxGa1-xAs clad layer 3, p type AlyGa1-yAs activation layer 4, n type AlzGa1-zAs clad layer 5, n type GaAs contact layer 6. The p type clad layer 3 and activation layer 4 may be made very thin and produced with high reproducibility because the rate is extremely low of the progress of liquid phase growth on the narrow mesa. |
| 公开日期 | 1986-01-20 |
| 申请日期 | 1984-06-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81974]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | FUKUNAGA TOSHIAKI,WATANABE AKIRA,IMANAKA KOUICHI,et al. Manufacture of semiconductor laser element. JP1986012090A. 1986-01-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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