Method of fabricating a semiconductor laser
文献类型：专利
| 作者 | MORI, YOSHIHIRO; MANNOH, MASAYA; KAMIYAMA, SATOSHI; OHNAKA, KIYOSHI |
| 发表日期 | 1993-12-07 |
| 专利号 | US5268328 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of fabricating a semiconductor laser |
| 英文摘要 | A method of fabricating a semiconductor laser includes successively forming on a semiconductor substrate by crystal growth an active waveguide comprised of a compound semiconductor comprising a Group V element phosphorus, a thin-film layer comprised of a first-conductivity type compound semiconductor comprising a Group V element arsenic and a current blocking layer comprised of a second-conductivity type compound semiconductor comprising a Group V element arsenic. A mask is formed for selectively etching the current blocking layer in the form of a stripe. A buffer-etching step is formed on both the current blocking layer and the mask to expose a surface of the current blocking layer and the thin-film layer, the surface including a Group V element arsenic. An outer cladding layer comprising a first-conductivity type compound semiconductor having a Group V element arsenic is formed on the current blocking layer and the thin-film layer in an atmosphere having a Group V element arsenic. The method has characteristic features including carrying out the crystal growth only twice, minimizing the movement of impurities in crystals, regrowing the interface with a very little defect and forming a structure wherein the outer cladding layer has a smaller width at its portion near to the active waveguide. |
| 公开日期 | 1993-12-07 |
| 申请日期 | 1992-12-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81976]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | MORI, YOSHIHIRO,MANNOH, MASAYA,KAMIYAMA, SATOSHI,et al. Method of fabricating a semiconductor laser. US5268328. 1993-12-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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