Manufacture of semiconductor device
文献类型：专利
| 作者 | TANAKA TOSHIO; SOGOU TOSHIO; TAKAMIYA SABUROU |
| 发表日期 | 1983-06-18 |
| 专利号 | JP1983102592A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To provide the manufacturing method of the semiconductor device, wherein the conductive type of a part of or the entire part of at least one layer of one or more epitaxial layers can be converted, by forming vacant lattice points in a compound semiconductor layer. CONSTITUTION:On an N type GaAs substrate 1 having a strapezoidal projection, a Ge doped AlGaAs layer 2, an N type AlGaAs layer 3, an N type or P type GaAs active layer 4, a P type AlGaAs layer 5, and a P type GaAs contact layer 6 are sequentially grown by a liquid phase epitaxial growing method. Said epitaxial wafer is heat treated in an As pressure atmosphere, and a inverted layer 21 is formed at a part of the side of the GaAs substrate 1 of the Ge doped AlGaAs layer 2. A layer 22 which is not inverted is left at a part thereof. The Ge doped AlGaAs layer 2 becomes a P conductive type and can be converted into an N conductive type by heat treatment. A P side electrode 7 and an N side electrode 8 are formed on the upper surface and the back surface of the wafer on which the N type inverted layer 7 is formed by the heat treatment, and the wafer is divided into chips. Thus laser diodes are completed. |
| 公开日期 | 1983-06-18 |
| 申请日期 | 1981-12-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81987]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIO,SOGOU TOSHIO,TAKAMIYA SABUROU. Manufacture of semiconductor device. JP1983102592A. 1983-06-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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