Semiconductor laser
文献类型：专利
| 作者 | OOMURA ETSUJI; SUZAKI WATARU |
| 发表日期 | 1984-05-23 |
| 专利号 | JP1984089484A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To lower resistance, and to obtain the semiconductor laser operating at low threshold currents by replacing an InP layer with an InGaAsP layer. CONSTITUTION:A second N-InGaAsP layer 102 as an active layer and a third N-InGaAsP layer 303 are formed on a first N-InGaAsP layer 301 in succession through a liquid growth method, etc. The forbidden band width Eg2 of the layer 102 is made smaller than the forbidden band width Eg1, Eg3 of other layers 301, 303 at that time because currents are to be concentrated to an active region. One parts of the layers 301, 102, 303 are inverted into a P type through a diffusion method to form a P type diffusion region 104. Accordingly, resistivity is lowered and the stable laser of a lateral mode can be obtained by low threshold currents, and processes such as complicate twice growth are not required for manufacture, and yield on manufacture can be improved remarkably. |
| 公开日期 | 1984-05-23 |
| 申请日期 | 1982-11-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81993]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | OOMURA ETSUJI,SUZAKI WATARU. Semiconductor laser. JP1984089484A. 1984-05-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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