Semiconductor laser device
文献类型：专利
| 作者 | KARAKIDA SHOICHI; KOKUBO YOSHIHIRO |
| 发表日期 | 1990-09-25 |
| 专利号 | JP1990240993A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve heat dissipation in a laser element and contrive improvement in characteristics by causing a diatomic compound semiconductor to be formed into a multilayer laminated structure as a clad layer in such a manner that it is laminated by two kinds of thin films that are 100Angstrom or less and further, making the laminating interface of a compound semiconductor layer intersect perpendicularly to an active layer face each other. CONSTITUTION:A superlattice structure consisting of AlAs and GaAs is constructed by a lower clad layer 3 and an AlAs barrier layer 4 which is used for confining carriers having a low thermal resistance so that a laminating interface is perpendicularly to an active layer face. A diatomic compound semiconductor is allowed to be formed into a multilayer laminated structure as a clad layer 3 in such a manner it is laminated by two kinds of thin films that are 100Angstrom or less and further, the laminating interface of a compound semiconductor layer is made to intersect perpendicularly to the active layer face each other. Consequently, laser oscillations cause heat that is generated in the vicinity of an AlGaAs active layer to be transmitted from a GaAs layer 1 to a submount without being affected by a contact thermal resistance and it is dissipated. A semiconductor laser device that is free from a contact resistance in an interface and has the clad layer in which a thermal resistance is low is thus obtained. |
| 公开日期 | 1990-09-25 |
| 申请日期 | 1989-03-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82001]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KARAKIDA SHOICHI,KOKUBO YOSHIHIRO. Semiconductor laser device. JP1990240993A. 1990-09-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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