Semiconductor laser
文献类型：专利
| 作者 | FURUSE TAKAO |
| 发表日期 | 1986-05-19 |
| 专利号 | JP1986100988A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To maintain a stable oscillating mode by enabling operation at low currents while shaping wide index waveguide structure by arranging a current constriction function and an index waveguide function so as to hold an epitaxial layer as an active layer from upper and lower sections and shaping a narrow current path. CONSTITUTION:Structure in which an N type Al0.35Ga0.65As layer 7 having a high refractive index is held by an N type Al0.4Ga0.6As layer 8 having a refractive index lower than the layer 7 is formed while the layer 7 is disposed adjoined to an Al0.12Ga0.88As layer 5 as an active layer, thus shaping an index waveguide function. An N type GaAs layer 3 as a current constriction layer is arranged adjoined to the lower side of the active layer 5, thus forming a narrow current path. The current constriction function and the index waveguide function are separated and optimum values can be selected independently by changing each groove width, thus easily optimizing element structure which has not been able to be realized in conventional laser structure. |
| 公开日期 | 1986-05-19 |
| 申请日期 | 1984-10-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82006]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | FURUSE TAKAO. Semiconductor laser. JP1986100988A. 1986-05-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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