Semiconductor device
文献类型：专利
| 作者 | SUYAMA NAOHIRO; TAKAHASHI KOUSEI; KONDO MASAFUMI; HAYAKAWA TOSHIRO |
| 发表日期 | 1989-04-13 |
| 专利号 | JP1989095582A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To enhance a laser characteristic by a method wherein a slope ranging from a third semiconductor layer to a substrate is formed on a side wall in one direction of a semiconductor composite layer having a first to a third semiconductor layers, a first clad layer, an active layer and a second clad layer are formed in a region on this slope and a laser action layer where each layer thickness has been controlled is installed. CONSTITUTION:A slope ranging from a third semiconductor layer 4 to a semiconductor substrate 1 is formed on a side wall in one direction of a semiconductor composite layer where a first to a third semiconductor layers 2-4 have been formed. As a laser action layer, a first clad layer 6 of a second conductivity type, an active layer 7 and a second clad layer 8 of a first conductivity type are formed one after another in a region 5 on this slope after a thickness of the individual layers 6-8 has been controlled. Accordingly, the active layer 7 is not curved; an electric current is confined inside the second semiconductor layer 2 forming the slope while it is sandwiched between the upper and lower layers 2, 4; the first and the third semiconductor layers 2, 4 function as light- absorbing layers. By this setup, a laser characteristic is enhanced. |
| 公开日期 | 1989-04-13 |
| 申请日期 | 1987-10-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82007]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | SUYAMA NAOHIRO,TAKAHASHI KOUSEI,KONDO MASAFUMI,et al. Semiconductor device. JP1989095582A. 1989-04-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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