Manufacture of semiconductor laser
文献类型：专利
| 作者 | HORIKAWA HIDEAKI; WADA HIROSHI; OGAWA HIROSHI; KAWAI YOSHIO |
| 发表日期 | 1988-12-06 |
| 专利号 | JP1988299289A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser which enhances the oscillation efficiency of a beam, whose threshold current is low and whose output is high by a method wherein an n-type InP current-blocking layer and a P-type GaInAsP buffer layer are formed at the lower part of an external waveguide region having a grating. CONSTITUTION:A groove part 11a is formed at one end on a P-type InP substrate 11 ; the surface excluding the groove part on the substrate is covered with an n-type InP current-blocking layer 13 by a liquid-phase epitaxial growth (LPE) method. Then, a P-type GaInAsP buffer layer 14 is formed on the whole surface; furthermore, a P-type InP clad layer 15 is deposited. A grating 15a is formed at the other end on the substrate; a selective growth mask 16 is put on it; a GaInAsP active layer 17 and an n-type InP protective layer 18 are deposited in succession on the clad layer by the LPE method. The mask is removed; an n-type GaInAsP external waveguide layer 19 and an n-type InP clad layer 20 are deposited in succession on the whole surface by the LPE method. Then, an inverted mesa stripe 21 is formed on the groove part; this part is filled with an n-type InP current constriction layer 22 and a P-type InP current constriction layer 23 by the LPE method; by this setup, a high-output semiconductor laser is manufactured. |
| 公开日期 | 1988-12-06 |
| 申请日期 | 1987-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82013]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HORIKAWA HIDEAKI,WADA HIROSHI,OGAWA HIROSHI,et al. Manufacture of semiconductor laser. JP1988299289A. 1988-12-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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