Semiconductor laser device
文献类型：专利
| 作者 | TSUKIKI KAZUNORI |
| 发表日期 | 1989-10-23 |
| 专利号 | JP1989265583A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve a device of this design in a heat dissipating property by a method wherein a photodetector is formed independently of a substrate on which a semiconductor element is mounted, and the photodetector is fixed to the substrate through the intermediary of an optional waveguide means. CONSTITUTION:A semiconductor laser element 2 is fixed onto a part of a surface of a substrate 1 excellent in a thermal conductivity. A photodetector 7 is fixed onto another part of the surface of the substrate 1 through the intermediary of an optical waveguide means which conducts a monitoring ray emitted from the element 2. When the element 2 is turned ON to start operating, intrinsic laser rays 11 are projected from a laser rays projecting end face 5. A monitoring ray 12 is projected from a laser ray projecting end face 6, the ray 12 is made to be incident on a transparent conductive bonding agent 10 and detected as a waveguide light by a photodetector 8. By these processes, a substrate excellent in A thermal conductivity can be used, so that a device is improved in a heat dissipating property. |
| 公开日期 | 1989-10-23 |
| 申请日期 | 1988-04-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82019]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | TSUKIKI KAZUNORI. Semiconductor laser device. JP1989265583A. 1989-10-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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