Manufacture of semiconductor light emitting element
文献类型：专利
| 作者 | NOMURA HIDENORI |
| 发表日期 | 1986-11-05 |
| 专利号 | JP1986248575A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting element |
| 英文摘要 | PURPOSE:To make it possible to confine carriers and current excellently by one epitaxial growth, by removing a part of an insulating film, which is formed on a semiconductor substrate, and selectively growing a semiconductor layer, which is to become a light emitting part on the surface of the exposed substrate surface. CONSTITUTION:A circular hole 10 is formed in the surface of a semiconductor substrate Then, an insulating film 2 is formed on the surface of the substrate Thereafter, the region located at the central part of the hole 10 in the film 2 is removed, and the surface of the substrate 1 is exposed. Then, on the surface of the exposed substrate 1, a buffer layer 3, an active layer 4, a confining layer 5 and a cap layer 6 are epitaxially grown in sequence. Thereafter, a P-side electrode 7 is formed on the layer 6 and the layer 2, and an N-side electrode 8 is formed on the back surface of the substrate Thus, the layer is grown in the shape embedded between the layer 3 and the layer 5. The side wall path of the layer 4 is restricted by the film 2 at the same time. Therefore, the effective carrier confinement in the layer 4 and the current injection can be accomplished. |
| 公开日期 | 1986-11-05 |
| 申请日期 | 1985-04-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82024]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NOMURA HIDENORI. Manufacture of semiconductor light emitting element. JP1986248575A. 1986-11-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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