Semiconductor laser
文献类型：专利
| 作者 | MORI KENZO; KONNO NOBUAKI |
| 发表日期 | 1991-06-18 |
| 专利号 | JP1991142891A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To narrow the lateral width of a light emitting region, lower a threshold, and stabilize a basic lateral mode by bending a light emitting region of an active layer viewed from the reflection end face side of laser light, and the active layer at both sides of the light emitting region and forming the active layer at a thin thickness. CONSTITUTION:A P-(A0.6Ga0.4)0.5P clad layer 4 grows, forming a plane 111B by the difference induced by both azimuths of crystal growth speed and it is raised near the end of ridge whereas recessed on the ridge. When an active layer 5 grows on the layer 4, the growth speed on the plane of 11B is slow while the thickness of the layer is thin. Near the ridge end the active layer is moderately curved and formed. The carriers injected from both the upper and lower clad layers 4 and 6, are confined inside the layer 5 and combined again, thereby emitting light. Since the layer 5 is subjected to curvature 10 on the ridge end, the spread of light in the lateral direction is restricted. The layer 5 curved on the ridge has a moderate index of refractory so that the light may be further confined near the center of the ridge,. thereby providing a semiconductor laser having a stabilized basic lateral mode. |
| 公开日期 | 1991-06-18 |
| 申请日期 | 1989-10-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82026]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MORI KENZO,KONNO NOBUAKI. Semiconductor laser. JP1991142891A. 1991-06-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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