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文献类型：专利
| 作者 | HASEGAWA OSAMU; KANEKO TOSHIAKI |
| 发表日期 | 1986-08-01 |
| 专利号 | JP1986033275B2 |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To prevent occurrence of dark line defect, by limiting activated region in on reverse joint region using GaAs crystal or GaAlAs crystal, and also by prescribing carrier concentration on low-carrier-concentration side in a semiconductor layer constituting a reverse joint region. CONSTITUTION:By allowing Ga1-xAlxAs crystal layer, whose x values are varied, to achieve liquid phase epitaxial growth in order of 1,2,3 and 4 on a GaAs substrate which is not shown in the figure, a photosemiconductor device of 4-layer structure is prepared. In such a constitution, electric conduction types of all the layers 1 through 4 are to be P, P, N and P, respectively, and x values are to be 0.38, 0.06, 0.3 and 0.15, respectively, and hetero-joint is developed between the layers 1 and 2, between the layers 2 and 3 is a PN joint which impresses forward bias, and between the layers 3 and 4 is a PN joint which impresses reverse bias. At this time, carrier concentration of the layer 3 is prescribed to become 3X10-1X10/cm, the concentrations of other layers are set to higher value, and the layer 2 is made to operate as a luminous region. |
| 公开日期 | 1986-08-01 |
| 申请日期 | 1979-09-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82034]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | HASEGAWA OSAMU,KANEKO TOSHIAKI. -. JP1986033275B2. 1986-08-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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