Semiconductor light emitting device
文献类型：专利
| 作者 | ODAKAWA TETSUSHI |
| 发表日期 | 1988-12-22 |
| 专利号 | JP1988314881A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To obtain a TE mode oscillation at a low temperature by forming an active layer of compound semiconductor having a larger lattice constant than that of a clad layer in a cubic crystal, and reducing the lattice constant of parallel direction smaller than that of perpendicular direction on the hetero junction boundary of the layer. CONSTITUTION:An n-type InP clad layer 2, and an active layer 3 having a composition of In1-xGaxAsyP1-y (where x=0.18, y=0.48), a larger lattice constant than that of the layer 2, and a cubic crystal structure are formed on an n-type InP substrate A p-type InP clad layer 4, a p type InGaAsP cap layer 5, a p-type InP layer 6, an n-type InP layer 7, an n-type InP layer 8 are formed thereon, and electrodes 10, 11 are formed. Then, a structure in which the lattice constant of parallel direction is reduced smaller than that of perpendicular direction in the hetero junction boundary of the layer 3 is formed. Thus, an oscillation of TE mode is obtained at a low temperature similarly to that at ambient temperature. |
| 公开日期 | 1988-12-22 |
| 申请日期 | 1987-06-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82035]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | ODAKAWA TETSUSHI. Semiconductor light emitting device. JP1988314881A. 1988-12-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。