Manufacture of semiconductor laser
文献类型：专利
| 作者 | MIZUOCHI HITOSHI |
| 发表日期 | 1991-07-03 |
| 专利号 | JP1991155182A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To enable the film thickness of a layer to be formed to be controlled easily by forming the layer to be formed by using the liquid growth method at a stripe groove and a cavity part simultaneously. CONSTITUTION:The title item has an active layer 28, an upper clad layer 29 sandwiching the active layer 28 from the above and below, a lower clad layer 27, and current-prevention layers 23 and 24 which sandwich the active layer from both sides. This manufacture forms the current-prevention layers 22, 23, and 24 on the main surface of a substrate 2 Then, a stripe groove 25 is formed at this current-prevention layer. Then, a lower clad layer 27 is formed within the stripe groove 25. Further, the active layer 28 is formed on the lower clad layer 27 within the strip groove 25. At least either the lower clad layer 27 or the active layer 28 is formed by the liquid phase growth method. Before forming a layer to be formed by this liquid growth method, a cavity part 26 is formed at the current-prevention layers 22-24 in addition to the stripe groove 25 and a layer is formed at that cavity part. |
| 公开日期 | 1991-07-03 |
| 申请日期 | 1989-11-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82060]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MIZUOCHI HITOSHI. Manufacture of semiconductor laser. JP1991155182A. 1991-07-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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