Semiconductor laser
文献类型：专利
| 作者 | HAYAKAWA, TOSHIRO; MIYAUCHI, NOBUYUKI; YANO, SEIKI; SUYAMA, TAKAHIRO |
| 发表日期 | 1986-03-05 |
| 专利号 | EP0133036A3 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | A GaAlAs semiconductor laser element includes a Ga1-xAlxAs active layer sandwiched by a first and second Ga1-yAlyAs cladding layers. A Ga,-zAlzAs substrate layer supports the first cladding layer, and a Ga,-zAlzAs cap layer covers the second cladding layer. The AlAs mole fraction (z) ofthe substrate layer and the cap layer is selected slightly smaller than the AlAs mole fraction (x) of the active layer. Further, the active layer is located in the laser element so that the active layer is separated from the mounted surface by more than 35% of the laser element thickness, and is separated from the opposing surface by more than 18% of the laser element thickness |
| 公开日期 | 1986-03-05 |
| 申请日期 | 1984-07-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82064]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | HAYAKAWA, TOSHIRO,MIYAUCHI, NOBUYUKI,YANO, SEIKI,et al. Semiconductor laser. EP0133036A3. 1986-03-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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