Semiconductor laser device
文献类型：专利
| 作者 | HIRAYAMA YUZO; MORINAGA MOTOYASU |
| 发表日期 | 1990-03-01 |
| 专利号 | JP1990062088A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To establish long distance large capacity optical communication by assuring a maximum and flat frequency band upon output operation by setting a structure parameter such that a ratio between a resonance frequency and the root of an optical output satisfying a particular relationship. CONSTITUTION:There are successively provided on an InP substrate 1 a GaInAsP active layer 2, a GaInAsP optical guide layer 4 including a primary diffraction grating 3 formed therein, an InP clad layer 5, and a GaInAsP contact layer 6. When an optical output in operation is assumed to be P(mW) (P>30), a structure parameter is set such that a ratio X (GHz.mW) between a resonance frequency and the root of an optical output satisfies a relation X=5 (2.2X10/P). Hereby, a maximum and flat frequency band is yielded upon output operation to assure long distance maximum capacity optical communication. |
| 公开日期 | 1990-03-01 |
| 申请日期 | 1988-08-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82067]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | HIRAYAMA YUZO,MORINAGA MOTOYASU. Semiconductor laser device. JP1990062088A. 1990-03-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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