Semiconductor laser
文献类型：专利
| 作者 | SAKAMOTO MASAMICHI |
| 发表日期 | 1988-04-27 |
| 专利号 | JP1988096988A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To sharpen a single peak FFP in a broad area laser structure by forming a current injected region to be dense at the center with respect to the lateral direction of a stripelike waveguide and rough at the periphery, and a gain distribution to be large at the center and small at the periphery. CONSTITUTION:An n-type GaAlAs clad layer 12, a GaAs active layer 13, a p-type GaAlAs clad layer 14, a p-type cap layer 15 and a metal electrode 16 are formed on an n-type GaAs substrate 11, and an electrode 17 is provided on the rear surface of the substrate 1 The layer 15 is selectively etched to form a large area narrow gap (a high density distribution) at the center of the part for forming the stripelike waveguide and a rough density distribution of a pattern toward both sides. When a forward voltage that the layer 15 side is positive is applied between the electrodes 16 and 17, carrier is fed to the layer 13 selectively only at the layer 15, and a gain distribution is large at the center and small at the periphery to sharpen a single peak FFP. |
| 公开日期 | 1988-04-27 |
| 申请日期 | 1986-10-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82073]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | SAKAMOTO MASAMICHI. Semiconductor laser. JP1988096988A. 1988-04-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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