Semiconductor light-emitting device
文献类型：专利
| 作者 | KIHARA KATSUHIRO |
| 发表日期 | 1986-06-28 |
| 专利号 | JP1986141193A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To contrive the flattening of the buried growth layer and the improvement of the quantum efficiency of a semiconductor light-emitting device by a method wherein a stripped active region and a semiconductor region; wherein the active region is buried and a semiconductor layer, which forms a P-N junction with the InGaAsP layer to be provided on the InP substrate, is included; are provided on the InGaAsP layer. CONSTITUTION:An N-type InGaAsP layer 2 is provided on an N-type InP substrate 1, and moreover, an N-type InP confinement layer 3, an InGaAsP active layer 4, a P-type InP confinement layer 5 and a P type InGaAsP contact layer 6 are provided and a mesa etching is performed in a stripe form. Then, the inverse N-P junction of a P-type InP layer 8 and an N-type InP layer 9 is formed on a P-type InGaAsP layer 7 being abutted on the vicinity of the heterojunction interface of the confinement layer 5 and the active layer 4. By this way, as am embedding growth progresses on the surface of the InGaAsP layer 7, which is parallel to the surface of the substrate 1, in the mesa etching to enable the striped region of the InP/InGaAsP system BH laser to form, the control to the flattening of the buried growth layer becomes easier. As a result, the leakage current in the operating state of the device reduces and the quantum efficiency thereof is made to improve. |
| 公开日期 | 1986-06-28 |
| 申请日期 | 1984-12-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82079]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KIHARA KATSUHIRO. Semiconductor light-emitting device. JP1986141193A. 1986-06-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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