Semiconductor light emitting device and manufacture thereof
文献类型：专利
| 作者 | ISSHIKI KUNIHIKO; SUZAKI WATARU |
| 发表日期 | 1988-07-13 |
| 专利号 | JP1988169787A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a semiconductor light emitting device having a refractive index waveguide mechanism for oscillating in a stable single lateral basic mode by dissolving an impurity in a melt used for a liquid growth, bringing a wafer into contact with the melt, and maintaining a predetermined temperature to diffuse the impurity, thereby liquid growing a necessary layer. CONSTITUTION:A current narrowing layer 6 is coated with a photoresist 11, and a stripelike opening 12 is formed by a photocomposing method. With the resist 11 as a mask the layer 6 is partly removed by chemically etching to form a forward mesa groove 10. After the resist 11 is then removed, a wafer is contained in a boat used for a liquid growing method, and a Ga melt 13 in which Zn and GaAs are dissolved is contacted. When it is held at approx. 800 deg.C for several hours, the Zn in the melt 13 is diffused to form a Zn-diffused region 8. The diffusing depth is so adjusted as to arrive at the layer 3 only directly under the groove 10 to precipitate the GaAs dissolved in the melt 13 by gradually cooling to form a GaAs contact layer 7. |
| 公开日期 | 1988-07-13 |
| 申请日期 | 1987-01-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82083]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ISSHIKI KUNIHIKO,SUZAKI WATARU. Semiconductor light emitting device and manufacture thereof. JP1988169787A. 1988-07-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。