Semiconductor laser device
文献类型：专利
| 作者 | OOTA YOICHIRO; TANAKA TOSHIO; TAKAMIYA SABURO |
| 发表日期 | 1987-10-08 |
| 专利号 | JP1987229893A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent deterioration of each required layer, such as oxidation. during the manufacturing of a laser device, by providing an etching control layer, etching a current blocking layer, removing the etching control layer, and forming a stripe shaped groove. CONSTITUTION:On a P-type GaAs substrate 1, an AlxGa1-xAs etching control layer 2 and an N-type GaAs current blocking layer 3 are sequentially grown by using an MO-CVD method. By using an etching mask 11, only the N-type GaAs current blocking layer 3 is etched with a selective etching liquid, by which GaAs is etched farther than AlGaAs. Thus a groove is formed. The mask 11 is removed. The etching control layer 2, which is exposed at the bottom part of the groove is removed by using an appropriate etching liquid. The chemically stable GaAs substrate 1 is exposed at the bottom part of the groove. Thus a stripe shaped groove 10 is formed. Required layers 4, 5, 6 and 7 are epitaxially grown by using the MO-CVD method. |
| 公开日期 | 1987-10-08 |
| 申请日期 | 1986-03-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82089]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OOTA YOICHIRO,TANAKA TOSHIO,TAKAMIYA SABURO. Semiconductor laser device. JP1987229893A. 1987-10-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。