Semiconductor light-emitting device and manufacture thereof
文献类型：专利
| 作者 | UEDA OSAMU |
| 发表日期 | 1985-01-18 |
| 专利号 | JP1985009186A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device and manufacture thereof |
| 英文摘要 | PURPOSE:To simplify structure, and to improve reproducibility by providing a first clad layer, an active layer, a second clad layer and a cap layer and making the band gaps of quantum wells in a plurality of active layers having multi- quantum well structure differ to each other. CONSTITUTION:An N type GaAs (buffer) layer 21, and N type Ga0.7Al0.3As (clad) layer 31, an active layer 41 having multi-quantum well structure, a P type Ga0.7Al0.3As (clad) layer 51, and an N type GaAs (cap) layer 61 are grown on an N type GaAs substrate 1 in an epitaxial manner in succession. An N type GaAs (buffer) layer 23, an N type Ga0.7Al0.3As (lad) layer 33, an active layer 43 having multi-quantum well structure, a P type Ga0.7Al0.3As (clad) layer 53, and an N type GaAs layer 63 are grown in the epitaxial manner. The band gap of a quantum well in the active layer 43 is made differ from those in active layers 41, 42. P type electrodes (Au/Zn) 130 are formed on the surfaces of cap layers 61-63 and an N type electrode (Au/Ge/Ni) 15 on the back of the substrate Mask films 141-143 are removed, and a planar stripe type multi-quantum well laser of three wavelengths is completed. |
| 公开日期 | 1985-01-18 |
| 申请日期 | 1983-06-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82096]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | UEDA OSAMU. Semiconductor light-emitting device and manufacture thereof. JP1985009186A. 1985-01-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。