Manufacture of semiconductor laser device
文献类型：专利
| 作者 | ATSUNUSHI FUMIHIRO; OKUMURA TOSHIYUKI; MORIOKA TATSUYA |
| 发表日期 | 1992-11-16 |
| 专利号 | JP1992326786A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To make small the oscillating threshold current and improve element property by providing a stripe-shaped laminate structure, which includes an active layer on a semiconductor substrate, and providing burying layers on both sides of the laminate structure. CONSTITUTION:An amorphous dielectric film 10 consisting of an Si3N4 film is formed on an n-InP substrate doped with Sn having a (100) face, and then a trench 101, which reaches the substrate 1, is made in the direction of [011]. On the substrate inside the trench 101 are stacked an n-InP clad layer 2 doped with Si, a nondoped GaInAsP active layer 3, a p-InP clad layer 4 doped with Zn, and a p-GaInAsP contact layer 5 doped with Zn. After removal of the dielectric film 10, a current block layer is made, which consists of a p-InP layer 6 doped with Zn and an n-InP layer 7 doped with Si. After removal of the p-InP layer 6 and the n-InP layer 7 made on the stripe-shaped multilayer film, on the surface of the p-GaInAsP contact layer is made an AuGe/Ni electrode 8 and on the rear of the n-InP substrate 1 is made an AuZn/Au electrode 9. |
| 公开日期 | 1992-11-16 |
| 申请日期 | 1991-04-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82109]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | ATSUNUSHI FUMIHIRO,OKUMURA TOSHIYUKI,MORIOKA TATSUYA. Manufacture of semiconductor laser device. JP1992326786A. 1992-11-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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