Semiconductor laser
文献类型：专利
| 作者 | WADA HIROSHI; OGAWA HIROSHI; KUNII TATSUO; YAMADA MITSUSHI |
| 发表日期 | 1990-06-19 |
| 专利号 | JP1990159784A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable a semiconductor laser of this design to output laser rays as small in a spectral line width as possible by a method wherein an equivalent refractive index difference in a lateral direction is set to a value as small as a refractive index waveguide structure can secure. CONSTITUTION:A equivalent refractive index difference DELTAn in a lateral direction is set to a value as small as a refractive index waveguide structure can secure, and the width of the optical waveguide region of a semiconductor laser active layer 5 is set to a value which is corresponding to the set equivalent refractive index difference DELTAn and the maximum value within a range that laser rays of modes other than a single lateral mode can be cut off. The equivalent refractive index DELTAn, which is determined by an equivalent refractive index nVeff of an active layer in a longitudinal direction and an equivalent refractive index nC of a current constriction layer 53, is required to satisfy a formula, DELTAn>=0.01, to secure a stable refractive index waveguide structure. By this setup, the junction of natural emission rays with an oscillation mode can be made small, so that a semiconductor laser which can output laser rays small in a spectral line width can be obtained. |
| 公开日期 | 1990-06-19 |
| 申请日期 | 1988-12-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82117]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | WADA HIROSHI,OGAWA HIROSHI,KUNII TATSUO,et al. Semiconductor laser. JP1990159784A. 1990-06-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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