Manufacture of semiconductor laser device
文献类型：专利
| 作者 | ISHIZUMI TAKASHI |
| 发表日期 | 1990-09-13 |
| 专利号 | JP1990230786A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To control the thickness of a GaAs layer with a high precision by forming the GaAs layer whose thickness is subjected to melt-back in the course of liquid growth of an Al GaAs layer, by using organic metal vapor growth method. CONSTITUTION:On an N-GaAs substrate 11, the following are grown in order by using MOCVD method; an N-Al0.48Ga0.52As clad layer 12, a P-Al0.14Ga0.86As active layer 13, a P-Al0.48Ga0.52As clad layer 14, a P-GaAs melt-back layer 15, an N-Al0.6Ga0.4As etching blocking layer 16, and an N-GaAs current constriction layer 17. In this case, the thin melt-back layer 15 is uniformly formed in an accurate thickness, so that the GaAs melt-back layer 15 is exposed on the bottom of a trench 18 by a first and a second etchant having selectivity, while maintaining an accurate thickness. |
| 公开日期 | 1990-09-13 |
| 申请日期 | 1989-03-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82121]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | ISHIZUMI TAKASHI. Manufacture of semiconductor laser device. JP1990230786A. 1990-09-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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