Semiconductor devices
文献类型：专利
| 作者 | OHISHI, AKIO; KURODA, TAKAO; TSUJI, SHINJI; HIRAO, MOTOHISA; MATSUMURA, HIROYOSHI |
| 发表日期 | 1990-02-27 |
| 专利号 | US4905057 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor devices |
| 英文摘要 | A semiconductor device such as a semiconductor laser device or a transistor which is small in both threshold current and leakage current and exhibits no increase with time in the threshold current and leakage current can be obtained by incorporating pnp or npn junctions in a buried layer which coats an active region containing InGaAsP, forming the mid layer of the junctions with InGaAsP, adjusting the conductivity type of the mid layer with an implanted ion and specifying the energy band width of a semiconductor constituting the mid layer. |
| 公开日期 | 1990-02-27 |
| 申请日期 | 1989-03-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82123]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | OHISHI, AKIO,KURODA, TAKAO,TSUJI, SHINJI,et al. Semiconductor devices. US4905057. 1990-02-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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