Semiconductor laser
文献类型：专利
| 作者 | TAKAHASHI KAZUHISA; OMURA ETSUJI; NAMISAKI HIROBUMI |
| 发表日期 | 1988-10-31 |
| 专利号 | JP1988263788A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To easily form a diffraction grating having high diffraction efficiency by periodically and alternately disposing semiconductor layers having superlattice structure and semiconductor layers in which the previous semiconductor layer is disordered at random in the grating of a single wavelength semiconductor laser. CONSTITUTION:A diffraction grating formed near an active layer 103 is composed by periodically alternately disposing layers 106 made of a superlattice structure and layers 107 in which the layer 106 is disordered at random. That is, the InGaAsP active layer 103 formed by a crystal growth on an InP substrate 101 having a flat surface, and the optical guide layer 106 of superlattice structure formed by alternately laminating InP layers and InGaAsP layers are formed. Then, a laser light 130 interfered from the surface of the layer 106 is irradiated to selectively and periodically disorder the superlattice structure of the layer 106 to form an optical guide layer 107, and an InP clad layer 104 and an InGaAsP contact layer 105 are formed on the layers 106, 107. Thus, the grating having high diffraction efficiency can be extremely easily formed near the layer 103. |
| 公开日期 | 1988-10-31 |
| 申请日期 | 1987-04-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82148]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TAKAHASHI KAZUHISA,OMURA ETSUJI,NAMISAKI HIROBUMI. Semiconductor laser. JP1988263788A. 1988-10-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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