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文献类型：专利
| 作者 | SAKUMA ISAMU |
| 发表日期 | 1988-04-20 |
| 专利号 | JP1988018874B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To enable the attainment of a condition of thoroughly squeezing currents by a method wherein a current squeezing P region is formed in a semiconductor substrate by a diffusing method before being epitaxially grown. CONSTITUTION:The P region 11 is formed on the semiconductor substrate made of N type InP 10 with an SiO2 film 18 as a mask. Then, an active layer 12 and a P type InP layer 13 of a cladding layer are formed. Then, a mesa-type active region is formed by etching after an SiO2 19 is formed in stripelike. Subsequently, an N- InP layer 14 of the cladding layer is grown and finally, a P type electrode and N type electrode are formed. |
| 公开日期 | 1988-04-20 |
| 申请日期 | 1980-05-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82167]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | SAKUMA ISAMU. -. JP1988018874B2. 1988-04-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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