Semiconductor laser device
文献类型：专利
| 作者 | OHGOH, TSUYOSHI; FUKUNAGA, TOSHIAKI |
| 发表日期 | 2005-02-15 |
| 专利号 | US6856636 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | An n-GaAs buffer layer, an n-Alz1Ga1−z1As cladding layer, an n- or i-In0.49Ga0.51P waveguide layer, an i-Inx3Ga1−x3As1−y3Py3 barrier layer, a compressive strain Inx1Ga1−x1As1−y1Py1 quantum well active layer, an i-Inx3Ga1−x3As1−y3Py3 upper barrier layer, and an In0.49Ga0.51P cap layer are laminated on an n-GaAs substrate. Regions near facets of the barrier layer to the cap layer are removed, and a p- or i-type In0.49Ga0.51P upper optical waveguide layer is laminated on the cap layer to fill in the removed portions. A p-GaAs etching stop layer, an n-In0.49(Alz2Ga1−z2)0.51P current confinement layer having an opening, an n-In0.49Ga0.51P second cap layer, a p-In0.49Ga0.51P second upper optical waveguide layer 34 and a p-Alz1Ga1−z1As upper cladding layer are laminated thereon, and a p-GaAs contact layer is formed inwardly except near the facets on the laminated surface, and an insulation film is formed on the regions near the facets, and a p-side electrode is provided as an uppermost layer. |
| 公开日期 | 2005-02-15 |
| 申请日期 | 2002-08-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82177]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | OHGOH, TSUYOSHI,FUKUNAGA, TOSHIAKI. Semiconductor laser device. US6856636. 2005-02-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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