Semiconductor laser
文献类型：专利
| 作者 | KIMURA TATSUYA; YOSHIDA NAOTO |
| 发表日期 | 1990-12-05 |
| 专利号 | JP1990294089A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser of high efficiency by forming a mesa part on a P-type GaAs layer and a P-type InGaP layer, and forming a specified clad layer and a specified active layer on the mesa. CONSTITUTION:On a mesa part 10 of a P-type GaAs buffer layer 2 on a P-type GaAs substrate 1, a P-type InGaP buffer layer 3 is formed. The following are formed; a first clad layer 4 of P-type (AlxGa1-x)0.5In0.5P covering the exposed part of the buffer layer 3 and the buffer layer 2, an undoped (AlyGa1-y)0.5In0.5P active layer 5 which is formed on the first clad layer 4 and bends in the vicinity of the mesa part 10, and a second clad layer 6 of N-type (AlzGa1-z)0.5In0.5P on the active layer 5. The following relations are kept for (x), (y), and (z); 0<=y |
| 公开日期 | 1990-12-05 |
| 申请日期 | 1989-05-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82183]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KIMURA TATSUYA,YOSHIDA NAOTO. Semiconductor laser. JP1990294089A. 1990-12-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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