Semiconductor laser
文献类型：专利
| 作者 | KAWANO HIDEO |
| 发表日期 | 1992-03-12 |
| 专利号 | JP1992078184A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To realize effective current constriction and to enable basic transverse mode oscillation at high output by forming an active layer between first and second conductivity clad layers, by providing a first semiconductor layer of first conductivity type whose refraction factor is larger than that of the active layer to a stripe-shaped mesa side part and an outside, and by providing a second conductivity-type Ga0.5In0.5 P layer to an upper part of the mesa and all over an upper surface of the first semiconductor layer. CONSTITUTION:Etching is carried out to the middle of a p-(Al0.6Ga0.4)0.5In0.5P clad layer 15 using concentrated sulfuric acid solution. Thereafter, an n-GaAs current constriction layer 17 is selectively formed on both slants and both flat parts of a mesa part 16 excepting a stripe-shaped SiO2 film mask by second MOVPE growth. After the SiO2 film mask is removed, a p-Ga0.5In0.5P contact layer 18 and a p-GaAs contact layer 19 are formed one by one all over an upper surface through third MOVPE growth. A laser wafer is completed by forming a p-side electrode 20 on a contact layer 19 and an n-side electrode 21 on an n-GaAs substrate 1 |
| 公开日期 | 1992-03-12 |
| 申请日期 | 1990-07-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82187]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KAWANO HIDEO. Semiconductor laser. JP1992078184A. 1992-03-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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