Semiconductor laser and its manufacture
文献类型：专利
| 作者 | INOUE KAORU |
| 发表日期 | 1984-12-27 |
| 专利号 | JP1984232480A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and its manufacture |
| 英文摘要 | PURPOSE:To prevent increase of contact resistance even when the width of an active layer becomes narrower by making the stripe width in the substrate surface layer of a stripe type region wider than that in a lower region. CONSTITUTION:A double hetero-construction substrate consists of an N type GaAs layer 21, an N type AlGaAs clad layer 22, a GaAs active layer 23, a P type AlGaAs clad layer 24 and a P type GaAs gap layer 25. The region indicated by oblique lines shows the half-insulated point by injection of proton ions. The width Wc of a stripe which has excellent conductivity in the gap layer 25 is made wider than the width W2 of a current passage in the clad layer 24. The construction shows that the half-insulated layer is also buried in the clad layer 24. |
| 公开日期 | 1984-12-27 |
| 申请日期 | 1983-06-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82209]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | INOUE KAORU. Semiconductor laser and its manufacture. JP1984232480A. 1984-12-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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