半導体レーザ装置
文献类型：专利
| 作者 | 手塚 勉; 黒部 篤; 川久 慶人 |
| 发表日期 | 1999-06-18 |
| 专利号 | JP2941463B2 |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置 |
| 英文摘要 | PURPOSE:To increase rate of spontaneous emission light combined to oscillation mode and to reduce oscillation threshold value by covering up and down and both side surfaces of an active layer with a distribution reflecting film, by restraining spontaneous emission which is emitted vertically in waveguide direction and by reinforcing waveguide mode including oscillation mode. CONSTITUTION:An active layer 14 and an optical guide layer 15 are between clad layers 13, 16, the N-type Ga1-yAlyAs clad layer 13 is provided under the active layer 14, and a P-type Ga1-yAlyAs clad layer is provided on the optical guide layer 15. The waveguide region is vertically sandwiched between first and second distribution reflecting films 12, 17. An N-type Ga1-z1Alz1As/Ga1-z2 Alz2As distribution reflecting film 12 is laminated between the clad layer 13 and a substrate 1 A P-type Ga1-z1Alz1As/Ga1-z2Alz2As distribution reflecting film 17 is formed on the clad layer 16. A high resistance Ga1-z1Alz1As/Ga1-z1 Alz1As distribution reflecting film 20 is formed right and left the active layer 14. |
| 公开日期 | 1999-08-25 |
| 申请日期 | 1991-02-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82220]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | 手塚 勉,黒部 篤,川久 慶人. 半導体レーザ装置. JP2941463B2. 1999-06-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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