Liquid phase epitaxial growth
文献类型：专利
| 作者 | HIRANO RIYOUICHI; NAMISAKI HIROBUMI; SUZAKI WATARU; TANAKA TOSHIO |
| 发表日期 | 1984-04-19 |
| 专利号 | JP1984068926A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid phase epitaxial growth |
| 英文摘要 | PURPOSE:To obtain a hetero junction which is formed by liquid phase epitaxial growth introducing three elements Ga, As and Al and has a thin growth layer or a sharp composition change by a method wherein, when a composition of a melted solution is changed from (l) to (m), a composition (n') which has an intermediate density of Al and saturated GaAs at the temperature 800 deg.C is prepared and the growth is made by replacing the composition of the melted solution from (l) to (n') and then to (m). CONSTITUTION:When a hetero junction is formed by liquid phase epitaxial growth introducing three elements Ga, As and Al a dissolved rate of solution As against solution Ga is changed non-proportionally according to the added amount of Al. The 1st liquid phase composition of the melted solution which has mol distribution of these elements lA, lB and lC and the 2nd liquid phase composition of the melted solution which has mol distribution of these elements mA, mB and mC are introduced so that the addition of Al is so balanced as to make mol distribution of Al, nC, conform to the relation lC |
| 公开日期 | 1984-04-19 |
| 申请日期 | 1982-10-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82226]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | HIRANO RIYOUICHI,NAMISAKI HIROBUMI,SUZAKI WATARU,et al. Liquid phase epitaxial growth. JP1984068926A. 1984-04-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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