Semiconductor laser
文献类型：专利
| 作者 | KURODA TAKAROU; KAJIMURA TAKASHI; KAYANE NAOKI; KASHIWADA YASUTOSHI; AIKI KUNIO; UMEDA JIYUNICHI; NAKAJIMA HISAO |
| 发表日期 | 1985-11-12 |
| 专利号 | JP1985227489A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain stable transverse fundamental mode oscillation by making the effective refractive index of beams in an active region smaller than that of beams in an optical waveguide region formed adjoined to said region. CONSTITUTION:An optical waveguide region at a central section A forms three- layer slab optical waveguides consisting of layers 5, 6, 7, and also confines beams in the vertical direction. Active regions B at both ends shape double hetero-type P-N junctions composed of layers 2, 3, 4, and the layer 3 represents an active layer in which the gains of a laser are generated. Consequently, the greater part of laser beams are confined in the layer 6 in the region A at a center, and beams of one part are projected to the layers 3 in the regions B, thus amplifying laser beams. When the refractive indices and thickness of each layer of the layers 2-7 are selected properly and the laser is designed so that the effective refractive index of beams propagated through the region A is made larger than those of beams propagated through the regions B on both sides at that time, stable transverse fundamental mode oscillation is obtained. |
| 公开日期 | 1985-11-12 |
| 申请日期 | 1985-04-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82236]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KURODA TAKAROU,KAJIMURA TAKASHI,KAYANE NAOKI,et al. Semiconductor laser. JP1985227489A. 1985-11-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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