Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | FUKUZAWA TADASHI |
| 发表日期 | 1989-12-26 |
| 专利号 | JP1989319981A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a laser having a high catastrophic optical damage(COD) level by forming an end face to which a band gap wider than the composition of an active layer, into which impurity ions are not implanted, is shaped. CONSTITUTION:A clad layer 4, a multiple quantum well type laser active layer 6 having superlattice structure, a clad layer 7 and a cap layer 9 are grown successively onto a substrate 3 by using an MBE method, thus forming laser structure. Si ions 21 are implanted. A region 17, into which Si is implanted in high concentration, in the multiple quantum well laser active layer 6 is shaped besides a region 12 into which Si is implanted. Since an impurity element implanted is activated and changed into a mixed crystal, an interface level is elevated and a band gap is scaled up in the window region of the active layer 6 to which an end face is formed, beams are hardly absorbed, thus displaying the action of the reduction of heat generation. |
| 公开日期 | 1989-12-26 |
| 申请日期 | 1988-06-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/82250]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | FUKUZAWA TADASHI. Semiconductor laser and manufacture thereof. JP1989319981A. 1989-12-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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